MMDFS2P102 datasheet(4/12 Pages) MOTOROLA

номер детали	MMDFS2P102

подробное описание детали	P-Channel Power MOSFET with Schottky Rectifier 20 Volts

PDF	12 Pages

Scroll/Zoom	100%

производитель	MOTOROLA [Motorola, Inc]

домашняя страница	http://www.freescale.com

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4 / 12 page

MMDFS2P102

Motorola TMOS Product Preview Data

TYPICAL FET ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

1.2

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

4.0

3.0

2.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

3.5

1.0

3.0

2.0

1.0

8.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.6

0.4

0.3

0.2

0.1

ID, DRAIN CURRENT (AMPS)

0.5

0.20

0.16

0.12

0.08

0.04

1.0

–25

–50

TJ, JUNCTION TEMPERATURE (°C)

1.2

0.8

0.6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

5.0

100

1.0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.5

2.0

2.5

3.0

4.0

2.0

4.0

6.0

1.5

2.0

2.5

3.0

3.5

4.0

100

1.0

1.8

0.5

125

150

1.4

1.6

VGS = 10 V

ID = 2.0 A

VGS = 0 V

TJ = 125°C

100

°C

TJ = 25°C

VGS = 4.5 V

10 V

TJ = 25°C

ID = 1.0 A

VDS ≥ 10 V

TJ = – 55°C

100

°C

TJ = 25°C

3.1 V

VGS = 2.4 V

10 V

4.5 V

3.8 V

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