MMDF5N02Z

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

0

0.4

1.6

2

0

2

6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.07

0.01

0

Figure 3. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1

100

Figure 5. On–Resistance Variation

with Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = –55°C

25

°C

100

°C

0.06

8

4

0.02

TJ = 25°C

4

8

1

2

1

1.5

2

2.5

0.04

02

4

8

1

10

0

2.5

5

7.5

15

2.7 V

10

12.5

0

0.02

0.04

6

34

8

6

5

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

6

4.5 V

VGS = 2.7 V

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

0

50

100

150

0

0.4

0.8

1.2

1.6

VGS = 4.5 V

ID = 2.5 A

125

75

25

–25

VGS = 0 V

TJ = 125°C

100

°C

1.2

10

2.0 V

1.7 V

1.8 V

4.5 V

VGS = 12 V

ID = 5 A

TJ = 25°C

1.9 V

0.5

0

2

0.01

0.03

0.05

1000

0.8

2.3 V

1.6 V

1.5 V

5

3

7

TJ = 25°C

0.03

0.05

7

35

7

0.06

0.07

0.08

0.2

0.6

1

1.4

0.1

10000

25

°C

17.5

20