MMDF4N01HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VGS = 4.5 V

ID = 4 A

8

TJ = 25°C

4.5 V

VGS = 8 V

3.1 V

2.7 V

2.5 V

2.3 V

2.1 V

1.9 V

1.5 V

1.7 V

1.3 V

TJ = 25°C

VGS = 2.7 V

4.5 V

0

0.4

0.8

1.2

1.6

2

0.2

0.6

1

1.4

1.8

0

0.4

0.8

1.2

1.6

2

0.2

0.6

1

1.4

1.8

0

2

4

6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1

1.2

1.4

2.2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

2

4

8

0.03

0.04

0.05

0.06

0.07

0

2

4

8

0.030

0.035

0.040

0.050

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0

2

4

12

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

VGS = 0 V

TJ = 25°C

ID = 2 A

1.6

1.8

2

6

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

10

8

10

100

°C

0

2

4

8

6

25

°C

100

°C

TJ = – 55°C

0.045

6

6

0

0.5

1

2

1.5