MMDF3N06HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

60

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0 Vdc)

(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

0.001

0.05

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

—

12

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

VGS(th)

1.0

—

—

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.3 Adc)

(VGS = 4.5 Vdc, ID = 2.5 Adc)

RDS(on)

—

—

67.5

82.5

100

200

m

W

Forward Transconductance

(VDS = 15 Vdc, ID = 1.5 Adc)

gFS

—

7.5

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

—

442

618

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

97.6

137

Transfer Capacitance

f = 1.0 MHz)

Crss

—

24.4

34.2

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

30 Vd

I

3 3 Ad

td(on)

—

10.6

22.1

ns

Rise Time

(VDD = 30 Vdc, ID = 3.3 Adc,

VGS =4 5Vdc

tr

—

15.9

31.8

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 30 Ω)

td(off)

—

23.8

47.6

Fall Time

G

)

tf

—

14.7

29.4

Turn–On Delay Time

(V

15 Vd

I

3 0 Ad

td(on)

—

7.0

14

ns

Rise Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS =10Vdc

tr

—

4.8

9.6

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

32.4

64.8

Fall Time

G

)

tf

—

14.2

28.4

Gate Charge

(See Figure 8)

(V

30 Vd

I

3 3 Ad

QT

—

14.5

29

nC

(See Figure 8)

(VDS = 30 Vdc, ID = 3.3 Adc,

Q1

—

1.8

—

( DS

, D

,

VGS = 10 Vdc)

Q2

—

3.5

—

Q3

—

3.75

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.78

0.65

1.2

—

Vdc

Reverse Recovery Time

(I

1 7 Adc V

0 Vdc

trr

—

27.9

—

ns

(IS = 1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

23

—

dIS/dt = 100 A/µs)

tb

—

4.9

—

Reverse Recovery Stored Charge

QRR

—

0.038

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.