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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistor

MiniMOS

™ devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process. These

miniature surface mount MOSFETs feature ultra low RDS(on) and true

logic level performance. They are capable of withstanding high energy

in the avalanche and commutation modes and the drain–to–source

diode has a very low reverse recovery time. MiniMOS devices are

designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are dc–dc

converters, and power management in portable and battery powered

products such as computers, printers, cellular and cordless phones.

They can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives. The avalanche energy is

specified to eliminate the guesswork in designs where inductive loads

are switched and offer additional safety margin against unexpected

voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

• Avalanche Energy Specified

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

40

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

40

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C (1)

ID

ID

IDM

3.4

3.0

40

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

Linear Derating Factor (1)

PD

2.0

16

Watts

mW/

°C

Total Power Dissipation @ TA = 25°C (2)

Linear Derating Factor (2)

PD

1.39

11.11

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)

EAS

162

mJ

THERMAL RESISTANCE

Rating

Symbol

Typ.

Max.

Unit

Thermal Resistance — Junction to Ambient, PCB Mount (1)

— Junction to Ambient, PCB Mount (2)

R

θJA

R

θJA

—

—

62.5

90

°C/W

(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)

(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 10 V, @ Steady State)

DEVICE MARKING

ORDERING INFORMATION

D3N04H

Device

Reel Size

Tape Width

Quantity

D3N04H

MMDF3N04HDR2

13

″

12 mm embossed tape

2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS, MiniMOS, and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Micro–8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Berquist Company.

REV 1

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMDF3N04HD/D

™

MMDF3N04HD

DUAL TMOS

POWER MOSFET

3.4 AMPERES

40 VOLTS

RDS(on) = 0.080 OHM

Motorola Preferred Device

D

S

G

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

CASE 751–05, Style 14

SO–8