MMDF3N02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

3.9 V

0

2

4

6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1

1.4

1.8

3.4

0

2

4

6

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

1

2

3

4

10

0

0.2

0.4

0.6

0

1

2

3

4

6

0.05

0.06

0.07

0.08

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0.6

1

1.2

1.4

1.6

0

4

8

20

1

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 100°C

25

°C

– 55

°C

TJ = 25°C

VGS = 0 V

ID = 1.5 A

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

ID = 1.5 A

2.2

2.6

3

5

6

7

8

9

5

10 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

0.8

10

12

16

25

°C

100

°C

0

0.2

0.4

0.6

0.8

1.4

1

1.2

1.6

1.8

2

1

3.7 V

3.1 V

2.7 V

2.9 V

VGS = 10 V

3.3 V

3.5 V

2.5 V

4.5 V

TJ = 25°C

5

3