MMDF2N06V

DUAL TMOS MOSFET

3.3 AMPERES

60 VOLTS

RDS(on) = 0.115 OHM

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

D

S

G

CASE 751–05, Style 11

SO–8

TM

1

Motorola TMOS Power MOSFET Transistor Device Data

Product Preview

TMOS V™

SO-8 for Surface Mount

N–Channel Enhancement–Mode Silicon Gate

TMOS V is a new technology designed to achieve an on–resis-

tance area product about one–half that of standard MOSFETs. This

new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOS E–FET

designs, TMOS V is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and

power motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against

unexpected voltage transients.

New Features of TMOS V

• On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low RDS(on) Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E–FET

• Miniature SO–8 Surface Mount Package – Saves Board Space

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

60

Vdc

Drain–to–Gate Voltage, (RGS = 1 MΩ)

VDGR

60

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

3.3

0.5

9.9

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

W

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 175

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.3 Apk, L = 10 mH, RG = 25 Ω)

EAS

54

mJ

Thermal Resistance, Junction to Ambient (1)

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 0.0625

″ from case for 10 seconds

TL

260

°C

DEVICE MARKING

2N06V

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF2N06V1

7

″

12mm embossed tape

500

MMDF2N06V2

13

″

12mm embossed tape

2500

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Order this document

by MMDF2N06V/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA