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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Dual N-Channel with

Monolithic Zener ESD

Protected Gate

EZFETs

™ are an advanced series of power MOSFETs which

utilize Motorola’s High Cell Density TMOS process and contain

monolithic back–to–back zener diodes. These zener diodes

provide protection against ESD and unexpected transients. These

miniature surface mount MOSFETs feature ultra low RDS(on) and

true logic level performance. They are capable of withstanding high

energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

EZFET devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

50

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

50

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 15

Vdc

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

2.0

1.7

8.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Thermal Resistance — Junction to Ambient

R

θJA

62.5

°C/W

Maximum Temperature for Soldering Purposes

TL

260

°C

DEVICE MARKING

D2N05Z

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF2N05ZR2

13

″

12 mm embossed tape

2500 units

(1) When mounted on G10/FR–4 glass epoxy board using minimum recommended footprint.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-

mark of the Bergquist Company.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMDF2N05ZR2/D

™

MMDF2N05ZR2

DUAL TMOS

POWER MOSFET

2.0 AMPERES

50 VOLTS

RDS(on) = 0.300 OHM

CASE 751–05, Style 11

SO–8

D

S

G

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

Motorola Preferred Device

REV 1