RF POWER IN (WATTS)

Figure 1, RF Power Out vs RF Power In

Figure 2, RF Power Out vs RF Power In

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

T

C

, CASE TEMPERATURE (

°C)

Figure 2, Typical Transfer Characteristics

Figure 3, Threshold Voltage vs Temperature

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

T

J

, JUNCTION TEMPERATURE (

°C)

Figure 4, Maximum DC Safe Operating Area

Figure 5, Breakdown Voltage vs Temperature

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6, Typical Capacitance vs. Drain-To-Source Voltage

010

20

30

40

0

2

4

6

8

-50

-25

0

25

50

75

100 125 150

1

5

10

50 100

1000

-50

-25

0

25

50

75

100 125 150

.01

.05

.1

.5

1

5

10

50

100

300

ARF444/445

VDS = 30V

250

µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

DS

= V

GS

1.2

1.1

1.0

0.9

0.8

0.7

1.2

1.1

1.0

0.9

0.8

0.7

Operation

Here

Limited

By

(ON)

TC = +25°C

TJ = +150°C

1200

800

400

0

16

12

8

4

0

10

5

1

.5

.1

5,000

1,000

500

100

50

10

Duty Cycle = 50%

TJ = -55°C

TJ = +25°C

TJ = +125°C

TJ = -55°C

TJ = +25°C

TJ = +125°C

Crss

Ciss

Coss

Performance of aTypical

Push-Pull Power Amplifier (4-Devices)

f = 13.56 MHz

V

DD

= 300V

V

GS

= 0V

Continuous Wave