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APT60M60JLL датащи(PDF) 2 Page - Advanced Power Technology |
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APT60M60JLL датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() ADV ANCE TECHNICAL INFORMA TION DYNAMIC CHARACTERISTICS APT60M60JLL THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.18 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source Drain Gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Source Source terminals are shorted internally. Current handling capability is equal for either Source terminal. Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C V GS = 15V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C R G = 0.6 W MIN TYP MAX 12290 2200 138 282 65 125 21 16 51 12 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, I S = -I D[Cont.] ) Reverse Recovery Time (I S = -I D[Cont.] , dl S /dt = 100A/µs) Reverse Recovery Charge (I S = -I D[Cont.] , dl S /dt = 100A/µs) Peak Diode Recovery dv/dt 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC V/ns MIN TYP MAX 70 280 1.3 950 33.0 8 Symbol I S I SM V SD t rr Q rr dv/ dt 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 1.47mH, RG = 25W, Peak IL = 70A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. I S £ -I D [Cont.] di/ dt £ 700A/µs V R £ V DSS T J £ 150 °C APT Reserves the right to change, without notice, the specifications and information contained herein. |
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