APT50M80 datasheet(2/2 Pages) ADPOW

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ADVANCED

TECHNICAL

INFORMATION

DYNAMIC CHARACTERISTICS

APT50M80B2VFR

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

ISM

VSD

dv/

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

t r

td(off)

t f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 0.6W

MIN

TYP

MAX

8630

1160

440

360

151

UNIT

MIN

TYP

MAX

232

1.3

Tj = 25°C

270

Tj = 125°C

540

Tj = 25°C

1.8

Tj = 125°C

6.2

Tj = 25°C

Tj = 125°C

THERMAL CHARACTERISTICS

Symbol

RqJC

RqJA

MIN

TYP

MAX

0.20

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

2-Plcs.

These dimensions are equal to the TO-247AD without mounting hole.

T-MAX™ Package Outline

1 Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A

temperature.

5 IS - -ID [Cont.], di/dt = 100A/µs, VDD - VDSS, Tj - 150°C, RG = 2.0W,

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

VR = 200V.

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

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