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APT5024BFLL датащи(PDF) 2 Page - Advanced Power Technology |
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APT5024BFLL датащи(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() ADVANCE TECHNICAL INFORMATION DYNAMIC CHARACTERISTICS APT5024 BFLL - SFLL 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate 5.45 (.215) BSC Dimensions in Millimeters and (Inches) 2-Plcs. TO-247 Package Outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 Plcs} 0.56 (.022) Dimensions in Millimeters (Inches) Heat Sink (Drain) and Leads are Plated 3.81 (.150) 4.06 (.160) (Base of Lead) 1.98 (.078) 2.08 (.082) Gate Drain Source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) Revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) Revised 4/18/95 D 3 PAK Package Outline APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Symbol IS ISM VSD dv/ dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) t r td(off) t f Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6W MIN TYP MAX 1910 390 30 48 13 22 12 10 30 7 UNIT pF nC ns MIN TYP MAX 22 88 1.3 15 Tj = 25°C 250 Tj = 125°C 400 Tj = 25°C 1.9 Tj = 125°C 6 Tj = 25°C 15 Tj = 125°C 26 THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.47 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 3.97mH, RG = 25W, Peak IL = 22A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. I S £ -I D [Cont.] di/ dt £ 700A/µs V R £ V DSS T J £ 150 °C APT Reserves the right to change, without notice, the specifications and information contained herein. |
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