ADVANCE

TECHNICAL

INFORMATION

DYNAMIC CHARACTERISTICS

APT30M30 B2LL - LLL

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.18

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

These dimensions are equal to the TO-247 without the mounting hole.

2-Plcs.

19.51 (.768)

20.50 (.807)

19.81 (.780)

21.39 (.842)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

3.10 (.122)

3.48 (.137)

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

2.59 (.102)

3.00 (.118)

0.48 (.019)

0.84 (.033)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

2.29 (.090)

2.69 (.106)

5.79 (.228)

6.20 (.244)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

TO-264 (L) Package Outline

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6

W

MIN

TYP

MAX

7830

1870

89

146

40

56

15

22

35

8

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

V/ns

MIN

TYP

MAX

100

400

1.3

450

10.0

5

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dt

temperature.

D

V

V

DSS

T

150

APT Reserves the right to change, without notice, the specifications and information contained herein.