V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

1

5

10

50 100

500 1000

.01

.1

1

10

50

0

50

100

150

200

250

300

350

0.2

0.4

0.6

0.8

1.0

1.2

APT10086SVR

TC =+25°C

TJ =+150°C

SINGLE PULSE

60

10

5

1

.5

.1

20

16

12

8

4

0

15,000

10,000

5,000

1,000

500

100

50

10

5

1

.5

.1

OPERATION HERE

LIMITED BY RDS (ON)

10

µS

TJ =+150°C

TJ =+25°C

Crss

Coss

Ciss

VDS=200V

VDS=100V

VDS=500V

1mS

10mS

100mS

DC

100

µS

I

D

= I

D

[Cont.]

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

15.95 (.628)

16.05 (.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51 (.532)

Revised

8/29/97

1.04 (.041)

1.15 (.045)

13.79 (.543)

13.99 (.551)

Revised

4/18/95

D

3

PAK Package Outline