MIN

TYP

MAX

APT10050JN

20.5

APT10050JN

82

1.8

1280

2000

16

32

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25

°C

R

G

= 0.6

Ω

MIN

TYP

MAX

5425

6500

710

995

230

350

235

370

24

36

107

160

15

30

15

30

47

75

15

30

UNIT

pF

nC

ns

APT10050JN

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

(Body Diode)

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

UNIT

Amps

Volts

ns

µC

Characteristic / Test Conditions

Maximum Torque for Device Mounting Screws and Electrical Terminations.

UNIT

nH

Volts

pF

in-lbs

PACKAGE CHARACTERISTICS

Symbol

L

D

L

S

V

Isolation

C

Isolation

Torque

MIN

TYP

MAX

3

5

2500

35

13

µS, Duty Cycle < 2%

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5