APT1004RKN

APT1004R2KN

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

805

950

pF

115

160

pF

37

60

pF

35

55

nC

4.3

6.5

nC

18

27

nC

10

20

ns

918

ns

32

48

ns

23

46

ns

DYNAMIC CHARACTERISTICS

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V, I

D

= I

D

[Cont.]

V

DD

= 0.5 V

DSS

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.], V

GS

= 15V

R

G

= 1.8

Ω

Test Conditions

TYP

UNIT

MAX

MIN

Symbol Characteristic

APT1004R/1004R2KN

125

Watts

125

Watts

14.4

Amps

14.0

Amps

V

DS

= 0.4 V

DSS

, I

DS

= P

D

/ 0.4 V

DSS

, t = 1 Sec.

I

DS

= I

D

[Cont.],

V

D

S

= P

D

/ I

D

[Cont.], t = 1 Sec.

Safe Operating Area

Safe Operating Area

Inductive Current Clamped

SOA1

SOA2

I

LM

SAFE OPERATING AREA CHARACTERISTICS

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/

µs)

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

APT1004RKN

3.6

Amps

APT1004R2KN

3.5

Amps

APT1004RKN

14.4

Amps

APT1004R2KN

14.0

Amps

1.3

Volts

150

290

580

ns

0.8

1.65

3.3

µC

Symbol Characteristic / Test Conditions / Part Number

UNIT

MAX

TYP

MIN

Test Conditions / Part Number

Symbol Characteristic

MIN

TYP

MAX

UNIT

µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

1.0

0.5

0.1

0.05

0.01

0.004

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

D=0.5

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2