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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSM2250RU датащи(PDF) 2 Page - Analog Devices |
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SSM2250RU датащи(HTML) 2 Page - Analog Devices |
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2 / 10 page  –2– REV. 0 SSM2250–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Unit DEVICE CHARACTERISTICS Output Offset Voltage VOS BTL Mode; AV = 2; BTL+ to BTL– 4 100 mV Large Signal Voltage Gain AVO RL = 2 k Ω 2 V/mV Output Power POUT SE Mode: RL = 32 Ω, THD < 1% 90 mW BTL Mode: RL = 8 Ω, THD < 1% 1,000 mW Output Impedance ZOUT 0.1 Ω SHUTDOWN INPUT Input Voltage High VIH IS < 100 µA 2.0 V Input Voltage Low VIL IS > 1 mA 0.8 V POWER SUPPLY Supply Current IS BTL Mode 6.4 mA SE Mode 6.4 mA Supply Current/Amplifier IS 60 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 k Ω, C L = 50 pF 4 V/ µs Gain Bandwidth Product GBP 4 MHz Phase Margin Φo 84 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 45 nV/ √Hz Specifications subject to change without notice. (VS = 5.0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted) ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Unit DEVICE CHARACTERISTICS Output Offset Voltage VOS BTL Mode; AV = 2; BTL+ to BTL– 4 100 mV Large Signal Voltage Gain AVO RL = 2 k Ω 2 V/mV Output Power POUT SE Mode: RL = 32 Ω, THD < 1% 25 mW BTL Mode: RL = 8 Ω, THD < 1% 300 mW Output Impedance ZOUT 0.1 Ω SHUTDOWN INPUT Input Voltage High VIH IS < 100 µA 2.0 V Input Voltage Low VIL IS > 1 mA 0.8 V POWER SUPPLY Supply Current IS BTL Mode 6.4 mA SE Mode 6.4 mA Supply Current/Amplifier IS 32 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 50 pF 4 V/ µs Gain Bandwidth Product GBP 4 MHz Phase Margin Φo 84 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 45 nV/ √Hz Specifications subject to change without notice. (VS = 2.7 V, VCM = 1.35 V, TA = 25 C unless otherwise noted) |
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