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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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OP495GS датащи(PDF) 2 Page - Analog Devices |
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OP495GS датащи(HTML) 2 Page - Analog Devices |
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2 / 12 page  REV. B –2– OP295/OP495–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage VOS 30 300 µV –40 °C ≤ T A ≤ +125°C 800 µV Input Bias Current IB 820 nA –40 °C ≤ T A ≤ +125°C30 nA Input Offset Current IOS ±1 ±3nA –40 °C ≤ T A ≤ +125°C ±5nA Input Voltage Range VCM 0 +4.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ V CM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C 90 110 dB Large Signal Voltage Gain AVO RL = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V 1000 10,000 V/mV RL = 10 kΩ, –40°C ≤ TA ≤ +125°C 500 V/mV Offset Voltage Drift ∆V OS/∆T 15 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH RL = 100 kΩ to GND 4.98 5.0 V RL = 10 kΩ to GND 4.90 4.94 V IOUT = 1 mA, –40°C ≤ TA ≤ +125°C 4.7 V Output Voltage Swing Low VOL RL = 100 kΩ to GND 0.7 2 mV RL = 10 kΩ to GND 0.7 2 mV IOUT = 1 mA, –40°C ≤ TA ≤ +125°C90 mV Output Current IOUT ±11 ±18 mA POWER SUPPLY Power Supply Rejection Ratio PSRR ±1.5 V ≤ V S ≤ ± 15 V 90 110 dB ±1.5 V ≤ V S ≤ ± 15 V, –40 °C ≤ T A ≤ +125°C85 dB Supply Current Per Amplifier ISY VOUT = 2.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C 150 µA DYNAMIC PERFORMANCE Skew Rate SR RL = 10 kΩ 0.03 V/ µs Gain Bandwidth Product GBP 75 kHz Phase Margin θ O 86 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.5 µV p-p Voltage Noise Density en f = 1 kHz 51 nV/ √Hz Current Noise Density in f = 1 kHz <0.1 pA/ √Hz Specifications subject to change without notice. ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage VOS 30 500 µV Input Bias Current IB 820 nA Input Offset Current IOS ±1 ±3nA Input Voltage Range VCM 0 +2.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ V CM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C 90 110 dB Large Voltage Gain AVO RL = 10 kΩ 750 V/mV Offset Voltage Drift ∆V OS/∆T 1 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH RL = 10 kΩ to GND 2.9 V Output Voltage Swing Low VOL RL = 10 kΩ to GND 0.7 2 mV POWER SUPPLY Power Supply Rejection Ratio PSRR ±1.5 V ≤ V S ≤ ± 15 V 90 110 dB ±1.5 V ≤ V S ≤ ± 15 V, –40 °C ≤ T A ≤ +125°C85 dB Supply Current Per Amplifier ISY VOUT = 1.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C 150 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.03 V/ µs Gain Bandwidth Product GBP 75 kHz Phase Margin θ O 85 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.6 µV p-p Voltage Noise Density en f = 1 kHz 53 nV/ √Hz Current Noise Density in f = 1 kHz <0.1 pA/ √Hz Specifications subject to change without notice. (@ VS = +5.0 V, VCM = +2.5 V, TA = +25 C unless otherwise noted) (@ VS = +3.0 V, VCM = +1.5 V, TA = +25 C unless otherwise noted) |
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