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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DG646BH25 датащи(PDF) 2 Page - Dynex Semiconductor |
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DG646BH25 датащи(HTML) 2 Page - Dynex Semiconductor |
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2 / 14 page  SEMICONDUCTOR DG646BH25 2/14 www.dynexsemi.com SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non repetitive) on-state current 10ms half sine. Tj = 125°C 18.0 kA I 2t I 2t for fusing 10ms half sine. Tj = 125°C 16.2 MA 2s diT/dt Critical rate of rise of on-state current VD = 1500V, IT = 2000A, Tj = 125°C, I FG > 30A, Rise time > 1.0 µs 300 A/µs To 66% VDRM; RGK ≤ 1.5 , Tj = 125°C 135 V/µs dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG ≤ -2V, Tj = 125°C 1000 V/µs LS Peak stray inductance in snubber circuit IT = 2000A, VDM = 2500V, Tj = 125°C, di GQ/dt = 40A/µs, CS = 2.0µF 200 nH GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units VRGM Peak reverse gate voltage This value may be exceeded during turn-off - 16 V IFGM Peak forward gate current 20 100 A PFG(AV) Average forward gate power - 15 W PRGM Peak reverse gate power - 19 kW diGQ/dt Rate of rise of reverse gate current 30 60 A/µs tON(min) Minimum permissible on time 50 - µs tOFF(min) Minimum permissible off time 100 - µs THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Double side cooled DC - 0.018 °C/W Anode DC - 0.03 °C/W Rth(j-hs) Thermal resistance – junction to heatsink surface Single side cooled Cathode DC - 0.045 °C/W Rth(c-hs) Contact thermal resistance Clamping force 20.0kN With mounting compound Per contact - 0.006 °C/W Tvj Virtual junction temperature On-state (conducting) - 125 °C TOP/Tstg Operating junction/storage temperature range -40 125 °C Fm Clamping force 18.0 22.0 kN |
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