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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DG406BP25 датащи(PDF) 2 Page - Dynex Semiconductor |
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DG406BP25 датащи(HTML) 2 Page - Dynex Semiconductor |
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2 / 19 page  DG406BP25 2/19 SURGE RATINGS Conditions 8.0 0.32 x 106 kA A2s Surge (non-repetitive) on-state current I2t for fusing 10ms half sine. T j = 125 oC 10ms half sine. T j =125 oC di T/dt Critical rate of rise of on-state current 300 500 V/ µs Max. Units Rate of rise of off-state voltage Peak stray inductance in snubber circuit dV D/dt 200 nH 1000 V/ µs To 66% V DRM; VRG = -2V, Tj = 125 oC I TSM Symbol Parameter I2t V D = 2000V, IT = 1000A, Tj = 125 oC, I FG ≥ 30A, Rise time > 1.0 µs A/ µs To 66% V DRM; RGK ≤ 1.5Ω, Tj = 125 oC L S GATE RATINGS Symbol Parameter Conditions V Units Max. 16 10 Min. - 20 - Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time 15 60 - 20 15 - - µs 100 70 V RGM This value maybe exceeded during turn-off I FGM P FG(AV) P RGM di GQ/dt t ON(min) t OFF(min) µs A/ µs kW W A THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max. Min. R th(c-hs) Contact thermal resistance R th(j-hs) - -0.1 - 0.009 oC/W per contact Cathode side cooled Double side cooled Units - 0.041 oC/W Anode side cooled oC/W 0.07 Virtual junction temperature T OP/Tstg Operating junction/storage temperature range - Clamping force - 125 15.0 11.0 -40 kN oC/W Clamping force 12.0kN With mounting compound DC thermal resistance - junction to heatsink surface T vj 125 oC oC - I T = 1000A, VD = VDRM, Tj = 125 oC, di GQ/dt = 30A/µs, Cs = 1.0µF |
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