VOS617A

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Vishay Semiconductors

Rev. 1.2, 27-Feb-13

2

Document Number: 83497

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Power Dissipation vs. Ambient Temperature

Fig. 2 - Forward Current vs. Ambient Temperature

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Power dissipation

70

mW

Forward current

50

mA

OUTPUT

Collector emitter voltage

80

V

Emitter collector voltage

7V

Collector current

50

mA

Power dissipation

150

mW

COUPLER

Isolation test voltage



between emitter and detector

t = 1 min

3750

Total power dissipation

170

mW

Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 110

°C

Junction temperature

125

°C

t = 10 s

260

°C

0

20

40

60

80

100

120

140

160

- 25

0

25

50

75

100

125

T

0

10

20

30

40

50

60

- 25

0

25

50

75

100

125

T