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CSD18502KCS датащи(PDF) 4 Page - Texas Instruments

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номер детали CSD18502KCS
подробное описание детали  40-V, N-Channel NexFET Power MOSFETs
PDF  9 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD18502KCS датащи(HTML) 4 Page - Texas Instruments

  CSD18502KCS Datasheet HTML 1Page - Texas Instruments CSD18502KCS Datasheet HTML 2Page - Texas Instruments CSD18502KCS Datasheet HTML 3Page - Texas Instruments CSD18502KCS Datasheet HTML 4Page - Texas Instruments CSD18502KCS Datasheet HTML 5Page - Texas Instruments CSD18502KCS Datasheet HTML 6Page - Texas Instruments CSD18502KCS Datasheet HTML 7Page - Texas Instruments CSD18502KCS Datasheet HTML 8Page - Texas Instruments CSD18502KCS Datasheet HTML 9Page - Texas Instruments  
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0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =100A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.5
0.8
1.1
1.4
1.7
2
2.3
2.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 100A
TC = 125ºC Id = 100A
G001
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
50
55
Qg - Gate Charge (nC)
ID = 100A
VDS = 20V
G001
10
100
1000
10000
50000
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD18502KCS
SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 5. Gate Charge
Figure 6. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 7. Threshold Voltage vs. Temperature
Figure 8. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 9. Normalized On-State Resistance vs. Temperature
Figure 10. Typical Diode Forward Voltage
4
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: CSD18502KCS



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