–3–

REV. D

DAC10

WAFER TEST LIMITS

DAC10N

Parameter

Symbol

Conditions

Limit

Units

RESOLUTION

10

Bits min

MONOTONICITY

10

Bits min

NONLINEARITY

NL

±0.5

LSB max

OUTPUT VOLTAGE COMPLIANCE

True 1 LSB

+10

V max

–5

V min

OUTPUT CURRENT RANGE

±3.996 mA

±18

µA max

ZERO-SCALE CURRENT

All Bits OFF

0.5

µA max

LOGIC INPUT “1”

2

V min

LOGIC INPUT “0”

0.8

V max

µA

POSITIVE SUPPLY CURRENT

I+

V+ = 15 V

4

mA max

NEGATIVE SUPPLY CURRENT

I–

V+ = –15 V

–15

mA max

NOTE: Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not

guaranteed for standard produce dice.

TYPICAL ELECTRICAL CHARACTERISTICS

DAC10F

Parameter

Symbol

Conditions

Typ

Units

SETTLING TIME

To

±1/2 LSB When Output Is Switched from 0 to FS

85

ns

GAIN TEMPERATURE

COEFFICIENT (TC)

±10

ppm FS/

°C

OUTPUT CAPACITANCE

18

pF

OUTPUT RESISTANCE

10

M

Ω

DICE CHARACTERISTICS

DIE SIZE 0.091

0.087 inch, 7,917 sq. mils

(2.311

2.210 mm, 5.107 sq. mm)