1

Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

SMARTDISCRETES

™

Internally Clamped, Current Limited

N–Channel Logic Level Power MOSFET

The MLP2N06CL is designed for applications that require a rugged power switching

device with short circuit protection that can be directly interfaced to a microcontrol unit

(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp

driver or other applications where a high in–rush current or a shorted load condition could

occur.

This logic level power MOSFET features current limiting for short circuit protection,

integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping

for over–voltage protection and Sensefet technology for low on–resistance. No additional

gate series resistance is required when interfacing to the output of a MCU, but a 40 k

Ω

gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate–Source and Gate–Drain clamps allow the device to be applied

without use of external transient suppression components. The Gate–Source clamp

protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The

Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs

with inductive loads. Their unique design provides voltage clamping that is essentially

independent of operating temperature.

The MLP2N06CL is fabricated using Motorola’s SMARTDISCRETES

™ technology which

combines the advantages of a power MOSFET output device with the on–chip protective

circuitry that can be obtained from a standard MOSFET process. This approach offers an

economical means of providing protection to power MOSFETs from harsh automotive and

industrial environments. SMARTDISCRETES

™ devices are specified over a wide tempera-

ture range from –50

°C to 150°C.

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

Clamped

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

Clamped

Vdc

Gate–to–Source Voltage — Continuous

VGS

±10

Vdc

Drain Current — Continuous @ TC = 25°C

ID

Self–limited

Adc

Total Power Dissipation @ TC = 25°C

PD

40

Watts

Electrostatic Voltage

ESD

2.0

kV

Operating and Storage Temperature Range

TJ, Tstg

–50 to 150

°C

THERMAL CHARACTERISTICS

Maximum Junction Temperature

TJ(max)

150

°C

Thermal Resistance – Junction to Case

R

θJC

3.12

°C/W

Maximum Lead Temperature for Soldering Purposes,

1/8

″ from case for 5 sec.

TL

260

°C

DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS

Single Pulse Drain–to–Source Avalanche Energy

(Starting TJ = 25°C, ID = 2.0 A, L = 40 mH)

EAS

80

mJ

SMARTDISCRETES is a trademark of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MLP2N06CL/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MLP2N06CL

Motorola Preferred Device

VOLTAGE CLAMPED

CURRENT LIMITING

MOSFET

62 VOLTS (CLAMPED)

RDS(on) = 0.4 OHMS

CASE 221A–06, Style 5

TO–220AB

G

D

S

D

G

S

R1

R2