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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ADP3203 датащи(PDF) 3 Page - Analog Devices |
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ADP3203 датащи(HTML) 3 Page - Analog Devices |
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3 / 12 page  ADP3203 REV. PrD –3– PRELIMINARY TECHNICAL DATA Parameter Symbol Conditions Min Typ Max Unit CORE COMPARATOR Input Offset Voltage (Ramp-Reg) V COREOS V REG = 1.25 V ±1.5 mV Input Bias Current I REG, IRAMP V REG = VRAMP = 1.25 V ±1 µA Output Voltage (OUT1,OUT2) V OUT_H V CC = 3.0 V 2.5 3.0 V V OUT_L V CC = 3.6 V 0 0.8 V Propagation Delay Time 2 t RMPOUT_PD 4 T A = 25°C 30 ns T A = Full Range 40 ns Rise and Fall Time 2 t OUT_R 5 710 ns t OUT_F 5 710 ns Noise Blanking Time 2 t BLNK OUT L-H Transition 80 ns OUT H-L Transition 120 ns CURRENT LIMIT COMPARATOR Input Offset Voltage V CLIMOS V CS- = 1.25 V ±4 ±6 mV Input Bias Current I CS+, ICS- V CS+ = 1.25 V –5 – 3 µA Propagation Delay Time2 t CLPD 4 T A = 25° C 30 60 ns T A = Full Range 50 100 ns CURRENT SENSE MULTIPLEXER Trans-Resistance R CS1-CS+, Switch is ON 150 Ω R CS2-CS+ Switch is OFF 100 M Ω Common Mode Voltage Range 7 V CS1 = VCS2 02 V HYSTERESIS SETTING Hysteresis Current I RAMP_H, V REG = 1.25 V -I CSP_H V RAMP = 1.23 V,BOM=H I HYSSET = 10 µA –8 –10 –12 µA I HYSSET = 100 µA –80 –100 –120 µA V RAMP = 1.27 V, BOM = H I HYSSET = 10 µΑ 810 12 µΑ I HYSSET = 100 µΑ 80 100 120 µΑ V RAMP = 1.23 V, BOM = L I HYSSET = 10 µΑ –6.4 –8 –9.6 µΑ I HYSSET = 100 µΑ –64 –80 –96 µΑ V RAMP = 1.27 V, BOM = L I HYSSET = 10 µΑ 64 8 96 µΑ I HYSSET = 100 µΑ 64 80 96 µA Hysteresis Reference Voltage V HYSSET 1.53 1.7 1.87 V CURRENT LIMIT SETTING Hysteresis Current I CS– V RAMP = 1.23 V V REG = VCS– = VCOREFB = 1.25 V V CS+ = 1.23 V BOM = H I HYSSET = 10 µΑ –27 –31.5 –36 µA I HYSSET = 100 µΑ –268 –301.5 –335 µA V CS+ = 1.27 V, BOM = H I HYSSET = 10 µΑ –18 –21.5 –25 µA I HYSSET = 100 µΑ –178 –201.5 –225 µA V CS+ = 1.23 V, BOM = L I HYSSET = 10 µΑ –21 –25.5 –30 µA I HYSSET = 100 µΑ –212 –241.5 –271 µA V CS+ = 1.27 V, BOM = L I HYSSET = 10 µΑ –14 –17.5 –21 µA I HYSSET = 100 µΑ –140 –161.5 –183 µA |
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