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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AOZ1361DI датащи(PDF) 3 Page - Alpha & Omega Semiconductors |
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AOZ1361DI датащи(HTML) 3 Page - Alpha & Omega Semiconductors |
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3 / 12 page  AOZ1361DI Rev. 2.0 October 2010 www.aosmd.com Page 3 of 12 Absolute Maximum Ratings Exceeding the Absolute Maximum ratings may damage the device. Recommended Operating Conditions The device is not guaranteed to operate beyond the Maximum Recommended Operating Conditions. Parameter Rating IN to GND -0.3V to +30V EN, OUT to GND -0.3V to VIN + 0.3V FLTB, TFLT, SS, SET -0.3V to +6V Maximum Junction Temperature (TJ) +150°C ESD Rating (HBM) 2.5kV Parameter Rating Thermal Resistance (DFN 4x4) 63°C/W Electrical Characteristics VIN = 12V, TA = 25°C unless otherwise stated. Symbol Parameter Conditions Min. Typ. Max Units VIN Input Supply Voltage 4.5 28 V VUVLO Undervoltage Lockout Threshold IN rising 3.9 4.4 V VUVHYS Undervoltage Lockout Hysteresis 200 mV IIN_ON Input Quiescent Current EN = IN, no load 300 500 µA IIN_OFF Input Shutdown Current EN = GND, no load 1 µA ILEAK Output Leakage Current EN = GND, no load 1 µA RDS(ON) Switch On Resistance VIN= 12V 22 35 m Ω VIN = 4.5V 33 43 ILIM Current Limit RSET = 74.5kΩ 22.7 3.4 A VEN_L Enable Input Low Voltage 0.8 V VEN_H Enable Input High Voltage 2.0 V VEN_HYS Enable Input Hysteresis 100 mV IEN_BIAS Enable Input Bias Current 1µA Td_on Turn-On Delay Time EN_50% to OUT_10% RL=120Ω, CL = 1µF, SS = Floated. Measure from 50% of EN voltage to 10% of OUT voltage 280 µs tON Turn-On Rise Time OUT_10% to 90% RL=120Ω, CL = 1µF, SS = Floated. Measure from 10% of OUT voltage to 90% of OUT voltage 220 µs RL=120Ω, CL = 1µF, CSS = 1nF 360 µs tOFF Turn-Off Fall Time RL=120Ω, CL = 1µF, SS = Floated 280 µs RDS(FLTB) On-Resistance at FLTB Sink current = 4mA 100 Ω ILEAK_FLT FLT Output Leakage 1µA TFLT FLT Delay Period CTLT = 1nF 600 µs TSD Thermal Shutdown Threshold 130 °C TSD_HYS Thermal Shutdown Hysteresis 30 °C |
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