AOWF10N65 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOW10N65 /AOWF10N65

Symbol

Min

Typ

Max

Units

650

750

BVDSS

/∆TJ

0.75

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

4.5

RDS(ON)

0.77

Ω

gFS

VSD

0.73

Maximum Body-Diode Continuous Current

ISM

Ciss

1095

1369

1645

Coss

118

154

Crss

1.7

3.5

5.5

Ω

27.7

Qgs

7.4

Qgd

5.5

11.3

tD(on)

tD(off)

255

320

385

µA

VDS=0V, VGS=±30V

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

BVDSS

Maximum Body-Diode Pulsed Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=325V, ID=10A,

RG=25Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=520V, ID=10A

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

IDSS

Zero Gate Voltage Drain Current

VDS=650V, VGS=0V

Diode Forward Voltage

VDS=5V ID=250µA

VDS=520V, TJ=125°C

IS=1A,VGS=0V

VDS=40V, ID=5A

Forward Transconductance

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Static Drain-Source On-Resistance

VGS=10V, ID=5A

Reverse Transfer Capacitance

I =10A,dI/dt=100A/

µs,V =100V

VGS=0V, VDS=25V, f=1MHz

trr

255

320

385

Qrr

4.8

7.2

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V

Body Diode Reverse Recovery Time

IF=10A,dI/dt=100A/µs,VDS=100V

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. L=60mH, I

AS=3.4A, VDD=150V, RG=25Ω, Starting TJ=25°C

Rev1: Nov 2011

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