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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AOTF20N40 датащи(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOTF20N40 датащи(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AOTF20N40 Symbol Min Typ Max Units 400 500 BVDSS /∆TJ 0.4 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.0 3.7 4.3 V RDS(ON) 0.2 0.25 Ω gFS 20 S VSD 0.7 1 V IS Maximum Body-Diode Continuous Current 20 A ISM 54 A Ciss 1510 1898 2290 pF Coss 145 212 290 pF Crss 9 15 21 pF Rg 1.5 3 4.5 Ω Qg 28 37 45 nC Qgs 12 nC Qgd 12 nC tD(on) 44 ns tr 87 ns tD(off) 96 ns Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=10V, VDS=200V, ID=20A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=0V, VDS=25V, f=1MHz Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS Zero Gate Voltage Drain Current µA BVDSS VDS=320V, TJ=125°C Zero Gate Voltage Drain Current ID=250µA, VGS=0V V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C VDS=400V, VGS=0V SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=10A Forward Transconductance Turn-Off DelayTime Gate Source Charge Gate Drain Charge Diode Forward Voltage VGS=10V, VDS=320V, ID=20A Turn-On Rise Time Static Drain-Source On-Resistance VGS=10V, ID=10A Reverse Transfer Capacitance VDS=5V, ID=250µA VDS=0V, VGS=±30V D(off) tf 59 ns trr 220 285 345 ns Qrr 3 3.9 4.8 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Turn-Off Fall Time IF=20A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, I AS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev0: May 2012 www.aosmd.com Page 2 of 6 |
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