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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AOTF10N90 датащи(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOTF10N90 датащи(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AOTF10N90 Symbol Min Typ Max Units 900 1000 BVDSS /∆TJ 0.9 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 0.82 0.98 Ω gFS 17 S VSD 0.7 1 V IS Maximum Body-Diode Continuous Current 10 A ISM 38 A Ciss 2100 2630 3160 pF Coss 130 190 250 pF Crss 10 18 26 pF Rg 1.5 3.4 5.2 Ω Qg 45 60 75 nC Qgs 13 nC Qgd 27 nC tD(on) 64 ns tr 105 ns tD(off) 155 ns ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Gate Drain Charge Total Gate Charge VGS=10V, VDS=720V, ID=10A Gate Source Charge Static Drain-Source On-Resistance VGS=10V, ID=5A Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-Off DelayTime VGS=10V, VDS=450V, ID=10A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Reverse Transfer Capacitance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions VDS=5V, ID=250µA VDS=720V, TJ=125°C Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current VDS=900V, VGS=0V BVDSS ID=250µA, VGS=0V µA VDS=0V, VGS=±30V V Drain-Source Breakdown Voltage VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=5A Forward Transconductance Diode Forward Voltage tD(off) 155 ns tf 84 ns trr 460 575 700 ns Qrr 7.0 9.9 12.0 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V Turn-Off DelayTime RG=25Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, I AS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev0: Oct 2012 www.aosmd.com Page 2 of 5 |
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