ADG751 datasheet(2/10 Pages) AD

2 / 10 page

REV. 0

–2–

ADG751–SPECIFICATIONS (V

DD = +5 V

10%, GND = 0 V, unless otherwise noted.)

B Grade

A Grade

–40 C to

Parameter

+25 C

+85 C

+25 C

+85 C

Units

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

On-Resistance (RON)28

Ω typ

VS = 0 V to VDD, IDS = 10 mA;

Ω max

Test Circuit 1

On-Resistance Flatness (RFLAT(ON))3

Ω typ

VS = 0 V to 2.5 V, IDS = 10 mA

Ω max

VDD = 4.5 V

LEAKAGE CURRENTS

VDD = +5.5 V

Source OFF Leakage IS (OFF)

±0.01

nA typ

VD = 4.5 V/1 V, VS = 1 V/4.5 V;

±0.25

±3.0

±0.25

±3.0

nA max

Test Circuit 2

Drain OFF Leakage ID (OFF)

±0.01

nA typ

VD = 4.5 V/1 V, VS = 1 V/4.5 V;

±0.25

±3.0

±0.25

±3.0

nA max

Test Circuit 2

Channel ON Leakage ID, IS (ON)

±0.01

nA typ

VD = VS = 1 V, or 4.5 V;

±0.25

±3.0

±0.25

±3.0

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, VINH

2.4

V min

Input Low Voltage, VINL

0.8

V max

Input Current

IINL or IINH

0.001

µA typ

VIN = VINL or VINH

±0.5

µA max

CIN, Digital Input Capacitance

pF typ

DYNAMIC CHARACTERISTICS

tON

ns typ

RL = 300 Ω, CL = 35 pF;

ns max

VS = 3 V, Test Circuit 4

tOFF

ns typ

RL = 300 Ω, CL = 35 pF;

ns max

VS = 3 V, Test Circuit 4

Charge Injection

pC typ

VS = 1 V, RS = 0 Ω, CL = 1.0 nF;

Test Circuit 5

Off Isolation

–75

–65

dB typ

RL = 50 Ω, CL = 5 pF, f = 100 MHz;

Test Circuit 6

–3 dB Bandwidth

180

300

MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7

CS (OFF)

pF typ

CD (OFF)

pF typ

CD, CS (ON)

pF typ

POWER REQUIREMENTS

VDD = +5.5 V

IDD

0.001

µA typ

Digital Inputs = 0 V or +5.5 V

0.1

0.5

0.1

0.5

µA max

NOTES

1Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

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