MJF47

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

250

—

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

ICEO

—

0.2

mAdc

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

ICES

—

0.1

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

—

1

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1 Adc, VCE = 10 Vdc)

hFE

30

10

150

—

—

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

VCE(sat)

—

1

Vdc

Base–Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

VBE(on)

—

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz)

fT

10

—

MHz

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

TYPICAL CHARACTERISTICS

0.02

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2

0.1

2

60

Figure 2. “On” Voltages

200

TJ = 150°C

1

25

°C

VCE = 10 V

IC, COLLECTOR CURRENT (AMPS)

0

0.6

1.4

100

10

40

20

4

6

0.04 0.06

0.2

0.4

0.6

– 55

°C

1.2

1

0.8

0.2

0.4

0.02

0.1

2

1

0.04 0.06

0.2

0.4 0.6

TJ = 25°C

VBE(sat) @ IC/IB = 5

VBE(on) @ VCE = 4 V

VCE(sat) @ IC/IB = 5 V