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ADG409BN датащи(PDF) 2 Page - Analog Devices

номер детали ADG409BN
подробное описание детали  LC2MOS 4-/8-Channel High Performance Analog Multiplexers
PDF  11 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

ADG409BN датащи(HTML) 2 Page - Analog Devices

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ADG408/ADG409–SPECIFICATIONS
DUAL SUPPLY1
B Version
T Version
–40 C to
–55 C to
Parameter
+25 C
+85 C
+25 C +125 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VSS to VDD
VSS to VDD V
RON
40
40
Ω typ
VD =
±10 V, I
S = –10 mA
100
125
100
125
Ω max
∆R
ON
15
15
Ω max
VD = +10 V, –10 V
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
±0.5
±50
±0.5
±50
nA max
VD =
±10 V, V
S =
10 V;
Test Circuit 2
Drain OFF Leakage ID (OFF)
VD =
±10 V; V
S =
10 V;
ADG408
±1
±100
±1
±100
nA max
Test Circuit 3
ADG409
±1
±50
±1
±50
nA max
Channel ON Leakage ID, IS (ON)
VS = VD =
±10 V;
ADG408
±1
±100
±1
±100
nA max
Test Circuit 4
ADG409
±1
±50
±1
±50
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
2.4
V min
Input Low Voltage, VINL
0.8
0.8
V max
Input Current
IINL or IINH
±10
±10
µA max
VIN = 0 or VDD
CIN, Digital Input Capacitance
8
8
pF typ
f = 1 MHz
DYNAMIC CHARACTERISTICS
2
tTRANSITION
120
120
ns typ
RL = 300 Ω, CL = 35 pF;
250
250
ns max
VS1 =
±10 V, V
SS =
10 V;
Test Circuit 5
tOPEN
10
10
10
10
ns min
RL = 300 Ω, CL = 35 pF;
VS = +5 V; Test Circuit 6
tON (EN)
85
125
85
125
ns typ
RL = 300
Ω, C
L = 35 pF;
150
225
150
225
ns max
VS = +5 V; Test Circuit 7
tOFF (EN)
65
65
ns typ
RL = 300
Ω, C
L = 35 pF;
150
150
ns max
VS = +5 V; Test Circuit 7
Charge Injection
20
20
pC typ
VS = 0 V, RS = 0 Ω, CL = 10 nF;
Test Circuit 8
OFF Isolation
–75
–75
dB typ
RL = 1 k
Ω, f = 100 kHz;
VEN = 0 V; Test Circuit 9
Channel-to-Channel Crosstalk
85
85
dB typ
RL = 1 k
Ω, f = 100 kHz;
Test Circuit 10
CS (OFF)
11
11
pF typ
f = 1 MHz
CD (OFF)
f = 1 MHz
ADG408
40
40
pF typ
ADG409
20
20
pF typ
CD, CS (ON)
f = 1 MHz
ADG408
54
54
pF typ
ADG409
34
34
pF typ
POWER REQUIREMENTS
IDD
11
µA typ
VIN = 0 V, VEN = 0 V
55
µA max
ISS
11
µA typ
55
µA max
IDD
100
100
µA typ
VIN = 0 V, VEN = 2.4 V
200
500
200
500
µA max
NOTES
1Temperature ranges are as follows: B Version: –40
°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–2–
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)



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