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SBP13005-S датащи(PDF) 1 Page - SemiWell Semiconductor |
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SBP13005-S датащи(HTML) 1 Page - SemiWell Semiconductor |
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1 / 4 page ![]() SBP13005-S Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved SemiWell Semiconductor Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Symbol Parameter Condition Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 4.0 A ICP Collector pulse Current 8.0 A IB Base Current 2.0 A IBM Base Peak Current tP = 5ms 4.0 A PC Total Dissipation at TC = 25℃ 75 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperture - 40 ~ 150 ℃ Thermal Characteristics Symbol Parameter Ratings Unit RθJC Thermal Resistance Junction to Case 1.67 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W High Voltage Fast Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ Minimum lot to lot hFE Variation ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Oct 2008. Rev. 0 1/4 |
Аналогичный номер детали - SBP13005-S |
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Аналогичное описание - SBP13005-S |
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