AOD607 datasheet(5/9 Pages) AOSMD

5 / 9 page

AOD607

Symbol

Min

Typ

Max

Units

BVDSS

-30

-0.003

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-1.5

-2

-2.4

ID(ON)

-40

TJ=125°C

Ω

gFS

VSD

-0.76

-1

-18

ISM

-40

Ciss

920

1100

Coss

190

Crss

122

3.6

Ω

Qg(10V)

18.7

Qg(4.5V)

9.7

11.7

Qgs

2.54

Qgd

5.4

tD(on)

tD(off)

trr

21.4

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-12A

Reverse Transfer Capacitance

IF=-12A, dI/dt=100A/µs

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=-4.5V, ID=-5A

IS=-1A,VGS=0V

VDS=-5V, ID=-12A

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.25Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate Source Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=-15V, f=1MHz

Gate Drain Charge

Total Gate Charge (10V)

VGS=-10V, VDS=-15V, ID=-12A

Pulsed Body-Diode Current

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

G. The maximum current rating is limited by the package current capability.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Rev3: Oct. 2008

Alpha & Omega Semiconductor, Ltd.

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