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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MBR20045CT датащи(PDF) 1 Page - Naina Semiconductor ltd. |
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MBR20045CT датащи(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor Ltd. MBR20045CT thru MBR200100CTR 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Silicon Schottky Diode, 200A Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM Maximum Ratings (TJ = 25 oC unless otherwise specified) Parameter Symbol Conditions MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100C T(R) Units Repetitive peak reverse voltage VRRM 45 60 80 100 V RMS reverse voltage VRMS 32 42 56 70 V DC blocking voltage VDC 45 60 80 100 V Average forward current IF(AV) TC ≤ 135 oC 200 200 200 200 A Non-repetitive forward surge current, half sine- wave IFSM TC = 25 oC tp = 8.3 ms 1500 1500 1500 1500 A Electrical Characteristics (TJ = 25 oC unless otherwise specified) Parameter Symbol Conditions MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100C T(R) Units DC forward voltage VF IF = 100 A TJ = 25 oC 0.68 0.76 0.88 0.88 V DC reverse current IR VR = 20 V TJ = 25 oC 5 5 5 5 mA VR = 20 V TJ = 125 oC 200 200 200 200 Thermal Characteristics (TJ = 25 oC unless otherwise specified) Parameter Symbol MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100C T(R) Units Thermal resistance junction to case RthJ-C 0.5 0.5 0.5 0.5 oC/W Operating, storage temperature range TJ , Tstg - 40 to +175 - 40 to +175 - 40 to +175 - 40 to +175 oC TWIN TOWER PACKAGE |
Аналогичный номер детали - MBR20045CT |
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Аналогичное описание - MBR20045CT |
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