AOD404 datasheet(1/6 Pages) AOSMD

номер детали	AOD404

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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производитель	AOSMD [Alpha & Omega Semiconductors]

домашняя страница	http://www.aosmd.com

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1 / 6 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

14.2

20

39

50

RθJL

0.8

1.5

A

Repetitive avalanche energy L=0.1mH

C

120

mJ

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±12

Pulsed Drain Current

Power Dissipation

B

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Ambient

A

Steady-State

85

65

200

Avalanche Current

C

30

Power Dissipation

A

TA=25°C

PDSM

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

B

30

W

Junction and Storage Temperature Range

A

PD

°C

100

50

-55 to 175

TC=100°C

ID

2.5

W

TA=70°C

1.6

AOD404

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 85A (VGS = 10V)

RDS(ON) < 7mΩ (VGS = 10V)

RDS(ON) < 8mΩ (VGS = 4.5V)

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

General Description

The AOD404 uses advanced trench technology to

provide excellent RDS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

-RoHS Compliant

-Halogen Free*

G

D

S

G

TO-252

D-PAK

Top View

S

Bottom View

D

G

S

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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