AD8517 datasheet(2/12 Pages) AD

2 / 12 page

–2–

REV. B

AD8517/AD8527–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

AD8517ART (SOT-23-5)

VOS

1.3

3.5

–40

°C ≤ T

≤ +125°C5

AD8527

VOS

1.3

3.5

–40

°C ≤ TA ≤ +125°C5

Input Bias Current

450

–40

°C ≤ TA ≤ +125°C

900

Input Offset Current

IOS

±225

–40

°C ≤ T

≤ +125°C

±750

Input Voltage Range

VCM

Common-Mode Rejection Ratio

CMRR

0 V

≤ VCM ≤ 5.0 V,

–40

°C ≤ T

≤ +125°C60

Large Signal Voltage Gain

AVO

RL = 2 k

Ω, 0.5 V < VOUT < 4.5 V

V/mV

RL = 10 k

Ω, 0.5 V < VOUT < 4.5 V

100

V/mV

RL = 10 k

Ω, –40°C ≤ T

≤ +125°C

V/mV

Offset Voltage Drift

∆VOS/∆T2

µV/°C

Bias Current Drift

∆IB/∆T

500

pA/

°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High

VOH

IL = 250

µA,

–40

°C ≤ T

≤ +125°C

4.965

IL = 5 mA

4.70

Output Voltage Swing Low

VOL

IL = 250

µA,

–40

°C ≤ T

≤ +125°C35

IL = 5 mA

200

Short Circuit Current

ISC

Short to Ground, Instantaneous

±10

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 2.2 V to 6 V

–40

°C ≤ TA ≤ +125°C65

Supply Current/Amplifier

ISY

VOUT = 2.5 V

900

1,200

µA

–40

°C ≤ T

≤ +125°C

1,400

µA

DYNAMIC PERFORMANCE

Slew Rate

1 V < VOUT < 4 V, RL = 10 k

Ω

8V/

µs

Gain Bandwidth Product

GBP

MHz

Settling Time

4 V Step, 0.1%

400

Phase Margin

Degrees

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

0.5

µV p-p

Voltage Noise Density

f = 1 kHz

nV/

√Hz

Current Noise Density

f = 1 kHz

1.2

pA/

√Hz

Specifications subject to change without notice.

(VS = 5.0 V, V– = 0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted)

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