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27291SL датащи(PDF) 12 Page - Freescale Semiconductor, Inc

номер детали 27291SL
подробное описание детали  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

27291SL датащи(HTML) 12 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
1000
15
21
0
60
Pout, OUTPUT POWER (WATTS) PULSED
Figure 16. Broadband Pulsed Power Gain and Drain
Efficiency versus Output Power — 470--860 MHz
100
10
19
18
17
16
40
30
20
10
Gps
ηD
20
50
--13
--6
900
450
IRL
Gps
f, FREQUENCY (MHz)
Figure 17. Broadband Pulsed Power Gain, Drain
Efficiency and IRL versus Frequency
800
750
700
650
600
550
500
21
20
66
62
46
38
ηD
17
16
13
19
18
54
--5
--11
Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
5--35
Pout, OUTPUT POWER (WATTS) AVG.
35
--5
25
10
--15
40
--25
Gps
VDD =50 Vdc,IDQ = 1400 mA
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
30
0
200
15
ηD
860 MHz
15
14
850
--7
20
IMD(1)
VDD =50 Vdc,Pout = 600 W Peak, IDQ = 1400 mA
Pulse Width = 100 μsec, Duty Cycle = 10%
665 MHz
470 MHz
860 MHz
470 MHz
665 MHz
665 MHz
470 MHz
860 MHz
665 MHz
470 MHz
665 MHz
470 MHz
860 MHz
58
50
42
34
--10
--20
--30
400
VDD =50 Vdc,IDQ = 1400 mA
Pulse Width = 100 μsec
Duty Cycle = 10%
860 MHz
80
120
160
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.



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