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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AD8019AR датащи(PDF) 2 Page - Analog Devices |
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AD8019AR датащи(HTML) 2 Page - Analog Devices |
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2 / 20 page  REV. 0 –2– AD8019–SPECIFICATIONS Parameter Conditions Min Typ Max Unit DYNAMIC PERFORMANCE –3 dB Bandwidth G = +5 35 MHz G = +1, VOUT < 0.4 V p-p, RL = 100 Ω 175 180 MHz G = +2, VOUT < 0.4 V p-p, RL = 100 Ω 70 75 MHz 0.1 dB Bandwidth VOUT < 0.4 V p-p, RL = 100 Ω 6 MHz G = +5, VOUT < 0.4 V p-p, RL = 100 Ω 35 MHz Large Signal Bandwidth VOUT = 4 V p-p 50 MHz Slew Rate Noninverting, VOUT = 4 V p-p 450 V/ µs Rise and Fall Time Noninverting, VOUT = 2 V p-p 5.5 ns Settling Time 0.1%, VOUT = 2 V p-p 40 ns NOISE/DISTORTION PERFORMANCE Distortion VOUT = 3 V p-p (Differential) Second Harmonic 100 kHz, RL(DM) = 50 Ω –78 dBc 500 kHz, RL(DM) = 50 Ω –74 dBc Third Harmonic 100 kHz, RL(DM) = 50 Ω –85 dBc 500 kHz, RL(DM) = 50 Ω –80 dBc Out-of-Band SFDR 144 kHz–1.1 MHz, Differential RL = 70 Ω –80 dBc MTPR 25 kHz–138 kHz, Differential RL = 70 Ω –72 dBc Input Voltage Noise f = 100 kHz 8 nV/ √Hz Input Current Noise f = 100 kHz 0.9 pA √Hz Crosstalk f = 1 MHz, G = +2 –80 dB DC PERFORMANCE Input Offset Voltage 820 mV TMIN–TMAX 10 23 mV Input Offset Voltage Match 112 mV TMIN–TMAX 217 mV Open-Loop Gain VOUT = 6 V p-p, RL = 25 Ω 72 80 dB TMIN–TMAX 72 80 dB INPUT CHARACTERISTICS Input Resistance 10 M Ω Input Capacitance 0.5 pF +Input Bias Current –3 +1 +3 µA TMIN–TMAX –4 +4 µA –Input Bias Current –1.5 –0.5 +1.5 µA TMIN–TMAX –1.8 +1.8 µA +Input Bias Current Match –1.0 –0.2 +1.0 µA TMIN–TMAX –1.5 +1.5 µA –Input Bias Current Match –0.5 +0.1 +0.5 µA TMIN–TMAX –0.8 +0.8 µA CMRR ∆V CM = –4 V to +4 V 71 74 dB Input CM Voltage Range 2 10 V OUTPUT CHARACTERISTICS Output Resistance 0.2 Ω Output Voltage Swing RL = 25 Ω –4.8 +4.8 V Output Current SFDR –80 dBc into 25 Ω at 100 kHz 175 200 mA Short Circuit Current 1 400 mA POWER SUPPLY Supply Current/Amp PWDN = 5 V 9 10.5 mA TMIN–TMAX 14.5 mA PWDN = 0 V 0.8 2.0 mA Operating Range Dual Supply ±4.0 ±6.0 V Power Supply Rejection Ratio ∆±V S = +1.0 V to –1.0 V 65 68 dB LOGIC LEVELS VPWDN = 0 V to 3 V; VIN = 10 MHz, G = +5 tON 120 ns tOFF 80 ns PWDN = “1” Voltage 1.8 +VS V PWDN = “0” Voltage 0.5 V PWDN = “1” Bias Current 220 µA PWDN = “0” Bias Current –100 µA NOTES 1This device is protected from overheating during a short-circuit by a thermal shutdown circuit. Specifications subject to change without notice. (@ 25 C, VS = 12 V, RL = 25 , RF = 500 , TMIN = –40 C, TMAX = +85 C, unless otherwise noted.) |
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