AO4604_09 datasheet(2/9 Pages) AOSMD

2 / 9 page

AO4604

Symbol

Min

Typ

Max

Units

BVDSS

0.004

TJ=55°C

IGSS

100

VGS(th)

1.9

ID(ON)

22.5

TJ=125°C

31.3

34.5

Ω

gFS

15.4

VSD

0.76

Ciss

680

820

Coss

102

Crss

1.2

Ω

Qg(10V)

13.84

Qg(4.5V)

6.74

8.1

Qgs

1.82

Qgd

3.2

tD(on)

4.6

4.1

tD(off)

20.6

5.2

trr

16.5

Qrr

7.8

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

IF=6.9A, dI/dt=100A/µs

N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS=±20V

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=4.5V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=6.9A

Ω

VGS=4.5V, ID=5.0A

VGS=0V, VDS=0V, f=1MHz

Forward Transconductance

VDS=5V, ID=6.9A

Diode Forward Voltage

IS=1A

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=15V, f=1MHz

Output Capacitance

Gate Drain Charge

Reverse Transfer Capacitance

Turn-On Rise Time

Turn-Off DelayTime

Gate resistance

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Turn-On DelayTime

VGS=10V, VDS=15V, RL=2.2Ω,

RGEN=3Ω

VGS=10V, VDS=15V, ID=6.9A

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value in

any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA curve

provides a single pulse rating.

Rev 4: Jan 2009

Alpha & Omega Semiconductor, Ltd.

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