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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AD7886JD датащи(PDF) 2 Page - Analog Devices |
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AD7886JD датащи(HTML) 2 Page - Analog Devices |
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2 / 16 page  AD7886–SPECIFICATIONS –2– REV. B (VDD = +5 V 5%, VSS = –5 V 5%, A6ND = DGND = O V, VREF = –3.5 V, connected as shown in Figure 2. All Specifications TMIN to TMAX unless otherwise noted. Specifications apply for 750 kHz version.) Parameter J Version 1 K, B Versions 1 T Version 1 Units Test Conditions/Comments DYNAMIC PERFORMANCE 2 Signal-to-Noise Ratio3 (SNR) 65 67 65 dB min VIN = 100 kHz Sine Wave, fSAMPLE = 750 kHz Total Harmonic Distortion (THD) –75 –75 –75 dB typ VIN = 100 kHz Sine Wave, fSAMPLE = 750 kHz Peak Harmonic or Spurious Noise –77 –77 –77 dB typ VIN = 100 kHz Sine Wave, fSAMPLE = 750 kHz Intermodulation Distortion (IMD) Second Order Terms –80 –80 –80 dB typ fa = 96 kHz, fb = 103 kHz, fSAMPLE = 750 kHz Third Order Terms –80 –80 –80 dB typ ACCURACY Resolution 12 12 12 Bits Integral Linearity TMIN to TMAX ±2 ±2 LSB max Minimum Resolution for Which No Missing Codes Are Guaranteed 12 12 12 Bits Unipolar Offset Error @ +25 °C ±5 ±5 ±5 LSB max Input Range: 0 V to 5 V or 0 V to 10 V TMIN to TMAX ±5 ±5 ±5 LSB max Bipolar Offset Error @ +25 °C ±5 ±5 ±5 LSB max Input Range: ±5 V TMIN to TMAX ±5 ±5 ±5 LSB max Unipolar Gain Error @ +25 °C ±5 ±5 ±5 LSB max Input Range: 0 V to 5 V or 0 V to 10 V TMIN to TMAX ±5 ±5 ±5 LSB max Bipolar Gain Error @ +25 °C ±5 ±5 ±5 LSB max Input Range: ±5 V TMIN to TMAX ±5+5 ±5 LSB max ANALOG INPUT Unipolar Input Current 1.5 1.5 1.5 mA max Input Ranges: 0 V to 5 V or 0 V to 10 V Bipolar Input Current ±0.75 ±0.75 ±0.75 mA max Input Range: ±5 V REFERENCE INPUT VREF –3.5 –3.5 –3.5 Volts ±2% For Specified Performance Input Reference Current –10 –10 –10 mA max R1, Resistance 9 9 9 k Ω nom ±25% R2, Resistance 6.3 6.3 6.3 k Ω nom ±25% R2/R1 Ratio 0.7 0.7 0.7 nom ±0.1% POWER SUPPLY REJECTION VDD Only, (FS Change) 0.5 0.5 0.5 LSB typ VSS = –5 V, VDD = +4.75 V to +5.25 V VSS Only, (FS Change) 0.5 0.5 0.5 LSB typ VDD = +5 V, VSS = –4.75 V to –5.25 V LOGIC INPUTS Input High Voltage, VINH 2.4 2.4 2.4 V min VDD = 5 V ± 5% Input Low Voltage, VINL 0.8 0.8 0.8 V max VDD = 5 V ± 5% Input Current, IIN ±10 ±10 ±10 µA max VIN = 0 V to VDD Input Capacitance, CIN 4 10 10 10 pF max LOGIC OUTPUTS DB11–DB0, BUSY Output High Voltage, VOH 4 4 4 V min ISOURCE = 200 µA Output Low Voltage, VOL 0.4 0.4 0.4 V max ISINK = 1.6 mA DB11–DB0 Floating-State Leakage Current ±10 ±10 ±10 pA max Floating-State Output Capacitance 4 15 15 15 pF max POWER REQUIREMENTS VDD +5 +5 +5 V nom ±5% for Specified Performance VSS –5 –5 –5 V nom ±5% for Specified Performance IDD 35 35 35 mA max Typically 25 mA, CONVST = CS = RD = VDD ISS –35 –35 –35 mA max Typically 25 mA, CONVST = CS = RD = VDD Power Dissipation 250 250 250 mW typ CONVST = CS = RD = VDD 350 350 350 mW max NOTES ITemperature ranges are as follows: J, K Versions: 0 °C to +70°C; B Version: –40°C to +85°C; T Version: –55°C to + 125°C. 2Applies to all three input ranges, V IN = 0 to FS, pk-to-pk V. 3SNR calculation includes distortion and noise components. 4Sample tested @ +25 °C to ensure compliance. Specifications subject to change without notice. |
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