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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AD7816 датащи(PDF) 2 Page - Analog Devices |
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AD7816 датащи(HTML) 2 Page - Analog Devices |
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2 / 20 page  REV. C –2– AD7816/AD7817/AD7818 Parameter A Version *B Version *S Version Unit Test Conditions/Comments DYNAMIC PERFORMANCE Sample Rate = 100 kSPS, Any Channel, fIN = 20 kHz Signal to (Noise + Distortion) Ratio 2 58 58 58 dB min Total Harmonic Distortion 2 –65 –65 –65 dB max –75 dB typ Peak Harmonic or Spurious Noise 2 –65 –65 –65 dB max –75 dB typ Intermodulation Distortion 2 fa =19.9 kHz, fb = 20.1 kHz Second Order Terms –67 –67 –67 dB typ Third Order Terms –67 –67 –67 dB typ Channel-to-Channel Isolation 2 –80 –80 –80 dB typ fIN = 20 kHz DC ACCURACY Any Channel Resolution 10 10 10 Bits Minimum Resolution for Which No Missing Codes are Guaranteed 10 10 10 Bits Relative Accuracy 2 1 1 1LSB max Differential Nonlinearity 2 1 1 1LSB max Gain Error 2 2 2 2LSB max External Reference 10 10 +20/–10 LSB max Internal Reference Gain Error Match 2 1/2 1/2 1/2 LSB max Offset Error 2 2 2 2LSB max Offset Error Match 1/2 1/2 1/2 LSB max TEMPERATURE SENSOR 1 Measurement Error External Reference VREF = 2.5 V Ambient Temperature 25 °C 2 1 2 °C max TMIN to TMAX 3 2 3 °C max Measurement Error On-Chip Reference Ambient Temperature 25 °C 2.25 2.25 2.25 °C max TMIN to TMAX 3 3 6 °C max Temperature Resolution 1/4 1/4 1/4 °C/LSB REFERENCE INPUT 3, 4 REFIN Input Voltage Range 3 2.625 2.625 2.625 V max 2.5 V + 5% 2.375 2.375 2.375 V min 2.5 V – 5% Input Impedance 40 40 40 k Ω min Input Capacitance 10 10 10 pF max ON-CHIP REFERENCE 5 Nominal 2.5 V Temperature Coefficient 3 80 80 150 ppm/ °C typ CONVERSION RATE Track/Hold Acquisition Time 4 400 400 400 ns max Source Impedance < 10 Ω Conversion Time Temperature Sensor 27 27 27 µs max Channels 1 to 4 9 9 9 µs max POWER REQUIREMENTS VDD 5.5 5.5 5.5 V max For Specified Performance 2.7 2.7 2.7 V min IDD Logic Inputs = 0 V or VDD Normal Operation 2 2 2 mA max 1.6 mA typ Using External Reference 1.75 1.75 1.75 mA max 2.5 V External Reference Connected Power-Down (VDD = 5 V) 10 10 12.5 µA max 5.5 µA typ Power-Down (VDD = 3 V) 4 4 4.5 µA max 2 µA typ Auto Power-Down Mode VDD = 3 V 10 SPS Throughput Rate 6.4 6.4 6.4 µW typ See Power vs. Throughput Section for 1 kSPS Throughput Rate 48.8 48.8 48.8 µW typ Description of Power Dissipation in 10 kSPS Throughput Rate 434 434 434 µW typ Auto Power-Down Mode Power-Down 12 12 13.5 µW max Typically 6 µW AD7817–SPECIFICATIONS1 (V DD = 2.7 V to 5.5 V, GND = 0 V, REFIN = 2.5 V unless otherwise noted) |
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