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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AOB290L датащи(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB290L датащи(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 140A RDS(ON) (at VGS=10V) < 3.5m Ω (< 3.2mΩ∗) 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 0.25 60 0.3 W Power Dissipation A PDSM W TA=70°C 500 1.3 TA=25°C 110 TC=25°C TC=100°C Power Dissipation B PD Continuous Drain Current 500 18 Avalanche energy L=0.1mH C A TA=25°C IDSM A TA=70°C 500 Pulsed Drain Current C Continuous Drain Current G ID 140 The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 100V mJ Avalanche Current C 15 A 100 V ±20 Gate-Source Voltage Drain-Source Voltage 100 °C Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W RθJA 12 50 15 Parameter Typ Max TC=25°C 2.1 250 TC=100°C Junction and Storage Temperature Range -55 to 175 G D S TO220 Top View Bottom View G G S D D S D D TO-263 D 2PAK Top View Bottom View D D S G G S Rev3 : Sep 2011 www.aosmd.com Page 1 of 6 |
Аналогичный номер детали - AOB290L |
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Аналогичное описание - AOB290L |
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ссылки URL |
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