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DTS2012 датащи(PDF) 3 Page - DinTek Semiconductor Co,.Ltd

номер детали DTS2012
подробное описание детали  N-Channel 30 V (D-S) MOSFET
PDF  9 Pages
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производитель  DINTEK [DinTek Semiconductor Co,.Ltd]
домашняя страница  http://www.daysemi.jp/
Logo DINTEK - DinTek Semiconductor Co,.Ltd

DTS2012 датащи(HTML) 3 Page - DinTek Semiconductor Co,.Ltd

  DTS2012 Datasheet HTML 1Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 2Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 3Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 4Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 5Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 6Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 7Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 8Page - DinTek Semiconductor Co,.Ltd DTS2012 Datasheet HTML 9Page - DinTek Semiconductor Co,.Ltd  
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3
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Current vs. Gate-to-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
0
10
20
30
40
0
3
6
9
12
15
18
V
GS - Gate-Source Voltage (V)
T
J = 25 °C
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS - Drain-to-Source Voltage (V)
V
GS = 1.5 V
V
GS = 2.5 V
V
GS = 5 V thru 3 V
V
GS = 2 V
0
0.04
0.08
0.12
0.16
0
4
8
12
16
20
I
D -Drain Current (A)
V
GS = 4.5 V
V
GS = 2.5 V
V
GS = 10 V
Gate Current vs. Gate-to-Source Voltage
Transfer Characteristics
Gate Charge
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0
3
6
9
12
15
18
V
GS - Gate-to-Source Voltage (V)
T
J = 150 °C
T
J = 25 °C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = 125 °C
T
C = - 55 °C
0
2
4
6
8
10
0
2
4
6
8
10
Q
g - Total Gate Charge (nC)
V
DS = 7.5 V
V
DS = 24 V
I
D = 4.7 A
V
DS = 15 V
DTS
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