MJD243

3

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

300

500

0.06

0.1

0.4

4

0.04

100

70

50

10

0.2

5

1

2

0.6

25

°C

TJ = 150°C

– 55

°C

VCE = 1 V

VCE = 2 V

Figure 4. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

∗θVC FOR VCE(sat)

θVB FOR VBE

+ 2.5

+ 2

+ 1.5

+ 1

0

– 0.5

– 1

– 1.5

– 2

+ 0.5

– 2.5

*APPLIES FOR IC/IB ≤ hFE/3

25

°C to 150°C

– 55

°C to 25°C

25

°C to 150°C

– 55

°C to 25°C

Figure 5. “On” Voltages

+11 V

25

µs

0

– 9 V

RB

– 4 V

D1

SCOPE

VCC

+ 30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

51

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

FOR PNP TEST CIRCUIT,

REVERSE ALL POLARITIES

Figure 6. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

VCC = 30 V

IC/IB = 10

td @ VBE(off) = 5 V

Figure 7. Switching Time Test Circuit

tr

1.4

IC, COLLECTOR CURRENT (AMP)

1.2

1

0.4

0.2

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat)

VBE @ VCE = 1 V

Figure 8. Turn–On Time

2000

IC, COLLECTOR CURRENT (AMP)

70

1000

700

500

300

200

100

50

Figure 9. Turn–Off Time

30

20

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

ts

tf

200

30

20

7

0.06

0.1

0.4

4

0.04

0.2

1

2

0.6

0.8

0.6

IC/IB = 10

5

0.06

0.1

0.4

4

0.04

0.2

1

2

0.6

0.06

0.1

0.4

4

0.04

0.2

1

2

0.6

0.06

0.1

0.4

4

0.04

0.2

1

2

0.6

300

500

100

70

50

10

5

200

30

20

7