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IR4301 датащи(PDF) 8 Page - International Rectifier

номер детали IR4301
подробное описание детали  Integrated analog input Class D audio amplifier in a small 5 x 6 mm PQFN package
PDF  14 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IR4301 датащи(HTML) 8 Page - International Rectifier

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IR4301,IR4311
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© 2012 International Rectifier
December 5, 2012
Electrical Characteristics
(cont’d)
VCC,VBS= 12 V, VSS=VS=VN=COM=0V, VAA=9.6V and TA=25C unless otherwise specified.
Symbol
Definition
Min
Typ
Max
Units
Test Conditions
Audio Input (VGND=0, VAA=4.8V, VSS=-4.8V)
VOS
Input offset voltage
-18
0
18
mV
IBIN
Input bias current
-
-
40
nA
GBW
Small signal bandwidth
-
9
-
MHz
CCOMP=1nF,
Rf=0
gm
OTA transconductance
-
10
-
mS
VIN+=0V, VIN-
=10mV
GV
OTA gain
50
-
-
dB
PWM
VthPWM
PWM comparator threshold in
COMP
-
(VAA -VSS)/2
-
V
fOTA
COMP pin star-up local
oscillation frequency
0.7
1.0
1.5
MHz
VCSD =GND
Ton
COMP to VS rising edge
propagation delay
-
370
-
ns
Toff
COMP to VS trailing edge
propagation delay
-
320
-
ns
DT
Deadtime: Low-side turn-off to
High-side turn-on (DTLO-HO) &
High-side turn-off to Low-side
turn-on (DTHO-LO)
-
50
-
ns
VP=30V,
VN=-30V
Power MOSFET (FET1, FET2) (IR4301)
V(BR)DSS
Drain-to-Source breakdown
voltage
80
-
-
V
VGS=0V,
ID=250uA
RDS(ON)
FET on resistance
-
39
50
m
Ω
VGS=10V, ID=3.3A
Qg
Total gate charge
-
7.3
-
nC
ILK0
VP leakage current, VS=VN
-
-
20
µA
VP=80V, VCSD
=VSS
ILK1
VP leakage current, VS=VP
-
-
50
µA
Power MOSFET (FET1, FET2) (IR4311)
V(BR)DSS
Drain-to-Source breakdown
voltage
40
-
-
V
VGS=0V,
ID=250uA
RDS(ON)
FET on resistance
-
44
56
m
Ω
ID=3.6A
Qg
Total gate charge
-
4.5
-
nC
VGS=10V
ILK0
VP leakage current, VS=VN
-
-
20
µA
VP=80V, VCSD
=VSS
ILK1
VP leakage current, VS=VP
-
-
50
µA



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