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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AD5235 датащи(PDF) 2 Page - Analog Devices |
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AD5235 датащи(HTML) 2 Page - Analog Devices |
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2 / 10 page  PRELIMINARY TECHNICAL DATA Nonvolatile Memory Digital Potentiometers AD5235 REV PrD 6 NOV, 2000 2 Information contained in this Product Concept data sheet describes a product in the early definition stage. There is no guarantee that the information contained here will become a final product in its present form. For latest information contact Walt Heinzer/Analog Devices, Santa Clara, CA. TEL(408)562-7254; FAX (408)727-1550; walt.heinzer@analog.com ELECTRICAL CHARACTERISTICS 25K, 250K OHM VERSIONS (V DD = +3V±10% or +5V±10% and VSS=0V, VA = +VDD, VB = 0V, -40°C < TA < +85°C unless otherwise noted.) Parameter Symbol Conditions Min Typ 1 Max Units DC CHARACTERISTICS RHEOSTAT MODE Specifications apply to all VRs Resistor Differential NL2 R-DNL RWB, VA=NC -1 ±1/4 +1 LSB Resistor Nonlinearity2 R-INL RWB, VA=NC -2 ±1/2 +2 LSB Nominal resistor tolerance ∆R TA = 25°C, VAB = VDD,Wiper (VW) = No connect -30 30 % Resistance Temperature Coefficent RAB/∆T VAB = VDD, Wiper (VW) = No Connect 50 ppm/°C Wiper Resistance RW IW = 1 V/R, VDD = +5V 50 100 Ω Wiper Resistance RW IW = 1 V/R, VDD = +3V 200 Ω DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE Specifications apply to all VRs Resolution N 10 Bits Integral Nonlinearity3 INL –2 ±1/2 +2 LSB Differential Nonlinearity3 DNL –1 ±1/4 +1 LSB Voltage Divider Temperature Coefficent ∆VW/∆T Code = Half-scale 15 ppm/°C Full-Scale Error VWFSE Code = Full-scale –3 -1 +0 LSB Zero-Scale Error VWZSE Code = Zero-scale 0 +1 +3 LSB RESISTOR TERMINALS Voltage Range4 VA,B,W VSS VDD V Capacitance5 Ax, Bx CA,B f = 1 MHz, measured to GND, Code = Half-scale 45 pF Capacitance5 Wx CW f = 1 MHz, measured to GND, Code = Half-scale 60 pF Common-mode Leakage Current7 ICM VA = VB = VDD/2 0.01 1 µA DIGITAL INPUTS & OUTPUTS Input Logic High VIH with respect to GND 0.3•VDD V Input Logic Low VIL with respect to GND 0.7•VDD V Output Logic High VOH RPULL-UP = 2.2K Ω to +5V 4.9 V Output Logic High VOH IOH = 40µA, VLOGIC = +5V 4 V Output Logic Low VOL IOL = 1.6mA, VLOGIC = +5V 0.4 V Input Current IIL VIN = 0V or VDD ±1 µA Input Capacitance5 CIL 5 pF POWER SUPPLIES Single-Supply Power Range VDD VSS = 0V 2.7 5.5 V Dual-Supply Power Range VDD/VSS VSS = 0V ±2.2 ±2.7 V Positive Supply Current IDD VIH = VDD or VIL = GND 2 20 µA Programming Mode Current IDD(PG) VIH = VDD or VIL = GND 15 mA Read Mode Current IDD(READ) VIH = VDD or VIL = GND 650 µA Negative Supply Current ISS VIH = VDD or VIL = GND, VDD = 2.5V, VSS = -2.5V 10 µA Power Dissipation6 PDISS VIH = VDD or VIL = GND 0.05 mW Power Supply Sensitivity PSS ∆VDD = +5V ±10% 0.002 0.01 %/% DYNAMIC CHARACTERISTICS5, 7 Bandwidth –3dB BW_25K R = 12K Ω 400 KHz Total Harmonic Distortion THDW VA =1Vrms, VB = 0V, f=1KHz 0.003 % VW Settling Time tS VA= VDD, VB=0V, 50% of final value 25K/250K 0.6/3/6 µs Resistor Noise Voltage eN_WB RWB = 10KΩ, f = 1KHz 9 nV √Hz Crosstalk CT VA = VDD, VB = 0V, Measue VW with adjacent VR making full scale change -65 dB |
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