ACE7401

P-Channel Enhancement Mode MOSFET

VER 1.3

1

Description

The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other batter powered circuits, and low in-line power loss are needed in

a very small outline surface mount package.

Features

DS(ON)

Application

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

-2.8

A

-2.1

Pulsed Drain Current

-8

A

Continuous Source Current (Diode Conduction)

-1.4

A

Power Dissipation

0.33

W

0.21

Operating Junction Temperature

-55/150

Storage Temperature Range

-55/150

Thermal Resistance-Junction to Ambient

105