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ACE5801 датащи(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE5801 датащи(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 5 page ![]() ACE5801 P-Channel Power MOSFET VER 1.2 1 Description The ACE5801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. . This device is suitable for use as a load switching application and a wide variety of other applications. Features Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge Applications PWM application Load switch Battery charge in cellular handset Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Drain Current-Continuous ID -16 A Drain Current-Pulsed (note 1) IDM -65 Power Dissipation (note 2, TA=25℃) PD 2.5 W Maximum Power Dissipation (note 3, TC=25℃) 18 Thermal Resistance from Junction to Ambient (note 4) RθJA 50 ℃/W Thermal Resistance from Junction to case (note 4) RθJC 6.9 Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~150 Packaging Type DFNWB2*2-6L |
Аналогичный номер детали - ACE5801 |
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Аналогичное описание - ACE5801 |
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