ACE3401 datasheet(2/7 Pages) ACE

номер детали	ACE3401

подробное описание детали	P-Channel Enhancement Mode MOSFET

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE3401

P-Channel Enhancement Mode MOSFET

VER 1.4

Packaging Type

SOT-23-3L

Ordering information

ACE3401 XX + H

Electrical Characteristics

(TA=25℃, Unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.4

-1.0

Gate Leakage Current

IGSS

VDS=0.V, VGS=±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

VDS=-24V, VGS=0V TJ=55℃

-10

On-State Drain Current

ID(ON)

VDS≦-5V, VGS=-10V

-10

Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4.0A

0.045

0.055

VGS=-4.5V, ID=-3.2A

0.050

0.065

VGS=-2.5V, ID=-1.2A

0.060

0.075

Forward Transconductance

Gfs

VDS=-5.0V, ID=-4.0A

Diode Forward Voltage

VSD

IS=-1.0A, VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

VDS=-15V, VGS=-10V,

ID≡-4.0A

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

3.7

Input Capacitance

Ciss

VDS=-15V, VGS=0V,

540

SOT-23-3L

Description

Gate

Source

Drain

BM: SOT-23-3L

Pb - free

Halogen - free

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